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FCD4N60 600V N-Channel MOSFET
FCD4N60
600V N-Channel MOSFET
Features
* 650V @TJ = 150C * Typ. RDS(on) = 1.0 * Ultra low gate charge (typ. Qg = 12.8nC) * Low effective output capacitance (typ. Coss.eff = 32pF) * 100% avalanche tested
SuperFET
Description
October 2006
TM
SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
D D
G
S
D-PAK
FCD Series
G
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FCD4N60
600 3.9 2.5 11.7 30 128 3.9 5.0 4.5 50 0.4 -55 to +150 300
Unit
V A A A V mJ A mJ V/ns W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
FCD4N60
2.5 83
Unit
C/W C/W
(c)2006 Fairchild Semiconductor Corporation
1
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FCD4N60 Rev. B
FCD4N60 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FCD4N60 FCD4N60
Device
FCD4N60TM FCD4N60TF
Package
D-PAK D-PAK
TC = 25C unless otherwise noted
Reel Size
380mm 380mm
Tape Width
16mm 16mm
Quantity
2500 2000
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
Notes:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250A, TJ = 25C VGS = 0V, ID = 250A, TJ = 150C ID = 250A, Referenced to 25C VGS = 0V, ID = 3.9A VDS = 600V, VGS = 0V VDS = 480V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 2.0A VDS = 40V, ID = 2.0A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min
600 -------3.0 ----------(Note 4, 5)
Typ
-650 0.6 700 -----1.0 3.2 415 210 19.5 12 32 16 45 36 30 12.8 2.4 7.1 ---277 2.07
Max Units
----1 10 100 -100 5.0 1.2 -540 275 -16 -45 100 85 70 16.6 --3.9 11.7 1.4 --V V V/C V A A nA nA V S pF pF pF pF pF ns ns ns ns nC nC nC A A V ns C
On Characteristics
Dynamic Characteristics
VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 3.9A RG = 25
Switching Characteristics
---------
VDS = 480V, ID = 3.9A VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 3.9A VGS = 0V, IS = 3.9A dIF/dt =100A/s
(Note 4)
--
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 1.9A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 3.9A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FCD4N60 Rev. B
2
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FCD4N60 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
VGS Top : 15.0 V 10.0 V 8.0V 7.5 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V
Figure 2. Transfer Characteristics
10
1
ID, Drain Current [A]
ID , Drain Current [A]
150 C
o
1
10
0
25 C -55 C
* Note 1. VDS = 40V 2. 250s Pulse Test
o
o
* Notes : 1. 250s Pulse Test
0.1
2. TC = 25 C
o
0.1
1
10
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
RDS(ON) [],Drain-Source On-Resistance
4
3
VGS = 10V
2
IDR , Reverse Drain Current [A]
10
1
10
0
1
VGS = 20V
150 C
o
25 C
* Notes : 1. VGS = 0V 2. 250s Pulse Test
o
* Note : TJ = 25 C
o
0 0.0
2.5
5.0
7.5
10.0
12.5
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
1200
Figure 6. Gate Charge Characteristics
12
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
VDS = 120V
VGS, Gate-Source Voltage [V]
1000
10
VDS = 300V VDS = 480V
Capacitance [pF]
800
* Notes : 1. VGS = 0 V 2. f = 1 MHz
8
600
Coss Ciss
6
400
4
200
2
* Note : ID = 3.9A
Crss
0 0 10 10
1
0
0
5
10
15
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FCD4N60 Rev. B
3
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FCD4N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
Drain-Source On-Resistance
2.5
1.1
RDS(ON), (Normalized)
2.0
1.0
1.5
0.9
*Notes : 1. VGS = 0 V 2. ID = 250A
1.0
*Notes : 1. VGS = 10 V 2. ID = 2.0 A
0.5
0.8 -100
-50
0
50
100
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
4
Operation in This Area is Limited by R DS(on)
10
1
10 us 100 us 1 ms
ID, Drain Current [A]
3
ID, Drain Current [A]
10
0
10 ms DC
* Notes : o 1. TC = 25 C 2. TJ = 150 C
o
2
1
10
-1
3. Single Pulse
10
0
10
1
10
2
10
3
0 25
50
75
100
o
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ C]
Figure 11-1. Transient Thermal Response Curve
ZJC(t), Thermal Response
10
0
D = 0 .5 0 .2 0 .1 0 .0 5
* N o te s : 1 . Z J C (t) = 2 .5 C /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)
o
10
-1
0 .0 2 0 .0 1 sin g le p u lse
PDM t1 t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]
FCD4N60 Rev. B
4
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FCD4N60 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCD4N60 Rev. B
5
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FCD4N60 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FCD4N60 Rev. B
6
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FCD4N60 600V N-Channel MOSFET
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
FCD4N60 Rev. B
7
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FCD4N60 600V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I20
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
8 FCD4N60 Rev. B
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